Visible and near-infrared alternating-current electroluminescence from sputter-grown GaN thin films doped with Er
Identifieur interne : 00BD89 ( Main/Repository ); précédent : 00BD88; suivant : 00BD90Visible and near-infrared alternating-current electroluminescence from sputter-grown GaN thin films doped with Er
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Abstract
A demonstration of visible and near-infrared (NIR) alternating-current electroluminescence from sputter-grown GaN thin films doped with Er is reported. The alternating-current thin-film electroluminescent (ACTFEL) devices were constructed using a standard single-insulating structure, Al/GaN:Er/aluminum-titanium-oxide/indium-tin-oxide/Corning 7059 glass. Visible emissions peaked at 550 and 665 nm as well as NIR emissions centered at 1000 and 1550 nm were observed from the fabricated ACTFEL devices operating at room temperature. The visible and NIR emissions at 550, 665, 1000, and 1550 nm were attributed to the Er3+4f-4f intrashell transitions from the 4S3/2, 4F9/2, 4I11/2, and 4I13/2 excited-state levels to the 4I15/2 ground state, respectively. The green 550 nm emission had a larger dI/dV and a higher threshold voltage, Vth than the NIR 1550 nm emission, which could result from the need for higher electron impact energy to impact-excite the Er ion into the higher-energy excited-states for emission of green light. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Visible and near-infrared alternating-current electroluminescence from sputter-grown GaN thin films doped with Er</title><author><name sortKey="Kim, Joo Han" uniqKey="Kim J">Joo Han Kim</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>MICROFABRITECH, University of Florida, Gainesville, Florida 32608</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>MICROFABRITECH, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Shepherd, N" uniqKey="Shepherd N">N. Shepherd</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Davidson, M R" uniqKey="Davidson M">M. R. Davidson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Holloway, Paul H" uniqKey="Holloway P">Paul H. Holloway</name></author></titleStmt><publicationStmt><idno type="inist">03-0494528</idno><date when="2003-11-24">2003-11-24</date><idno type="stanalyst">PASCAL 03-0494528 AIP</idno><idno type="RBID">Pascal:03-0494528</idno><idno type="wicri:Area/Main/Corpus">00C640</idno><idno type="wicri:Area/Main/Repository">00BD89</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electroluminescence</term><term>Erbium</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Semiconductor thin films</term><term>Sputtered coatings</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7860F</term><term>7866F</term><term>8115C</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Erbium</term><term>Electroluminescence</term><term>Couche mince semiconductrice</term><term>Revêtement pulvérisation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A demonstration of visible and near-infrared (NIR) alternating-current electroluminescence from sputter-grown GaN thin films doped with Er is reported. The alternating-current thin-film electroluminescent (ACTFEL) devices were constructed using a standard single-insulating structure, Al/GaN:Er/aluminum-titanium-oxide/indium-tin-oxide/Corning 7059 glass. Visible emissions peaked at 550 and 665 nm as well as NIR emissions centered at 1000 and 1550 nm were observed from the fabricated ACTFEL devices operating at room temperature. The visible and NIR emissions at 550, 665, 1000, and 1550 nm were attributed to the Er<sup>3+</sup>4f-4f intrashell transitions from the <sup>4</sup>S<sub>3/2</sub>, <sup>4</sup>F<sub>9/2</sub>, <sup>4</sup>I<sub>11/2</sub>, and <sup>4</sup>I<sub>13/2</sub> excited-state levels to the <sup>4</sup>I<sub>15/2</sub> ground state, respectively. The green 550 nm emission had a larger dI/dV and a higher threshold voltage, V<sub>th</sub> than the NIR 1550 nm emission, which could result from the need for higher electron impact energy to impact-excite the Er ion into the higher-energy excited-states for emission of green light. © 2003 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>21</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Visible and near-infrared alternating-current electroluminescence from sputter-grown GaN thin films doped with Er</s1></fA08><fA11 i1="01" i2="1"><s1>KIM (Joo Han)</s1></fA11><fA11 i1="02" i2="1"><s1>SHEPHERD (N.)</s1></fA11><fA11 i1="03" i2="1"><s1>DAVIDSON (M. R.)</s1></fA11><fA11 i1="04" i2="1"><s1>HOLLOWAY (Paul H.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>MICROFABRITECH, University of Florida, Gainesville, Florida 32608</s1></fA14><fA14 i1="03"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400</s1><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>MICROFABRITECH, University of Florida, Gainesville, Florida 32608</s1><sZ>4 aut.</sZ></fA14><fA20><s1>4279-4281</s1></fA20><fA21><s1>2003-11-24</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0494528</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A demonstration of visible and near-infrared (NIR) alternating-current electroluminescence from sputter-grown GaN thin films doped with Er is reported. The alternating-current thin-film electroluminescent (ACTFEL) devices were constructed using a standard single-insulating structure, Al/GaN:Er/aluminum-titanium-oxide/indium-tin-oxide/Corning 7059 glass. Visible emissions peaked at 550 and 665 nm as well as NIR emissions centered at 1000 and 1550 nm were observed from the fabricated ACTFEL devices operating at room temperature. The visible and NIR emissions at 550, 665, 1000, and 1550 nm were attributed to the Er<sup>3+</sup>4f-4f intrashell transitions from the <sup>4</sup>S<sub>3/2</sub>, <sup>4</sup>F<sub>9/2</sub>, <sup>4</sup>I<sub>11/2</sub>, and <sup>4</sup>I<sub>13/2</sub> excited-state levels to the <sup>4</sup>I<sub>15/2</sub> ground state, respectively. The green 550 nm emission had a larger dI/dV and a higher threshold voltage, V<sub>th</sub> than the NIR 1550 nm emission, which could result from the need for higher electron impact energy to impact-excite the Er ion into the higher-energy excited-states for emission of green light. © 2003 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B70H60F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7860F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8115C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Erbium</s0><s2>NC</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Erbium</s0><s2>NC</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Electroluminescence</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Electroluminescence</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor thin films</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Revêtement pulvérisation</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Sputtered coatings</s0></fC03><fN21><s1>328</s1></fN21><fN47 i1="01" i2="1"><s0>0346M000073</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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